Radar module with wafer level package and underfill

ABSTRACT

A semiconductor radar module includes an integrated circuit (IC) radar device embedded within a wafer level package compound layer, the wafer level package compound layer extending at least partially lateral to the IC radar device. An interface layer abutting the wafer level package compound layer comprises a redistribution layer coupled to the IC radar device for connecting the IC radar device externally. An underfill material extends between the interface layer and an external substrate and abuts the interface layer and the external substrate. The interface layer is disposed between the wafer level package compound layer and the underfill material.

REFERENCE TO RELATED APPLICATIONS

This application is a continuation of, and claims priority to and thebenefit of, U.S. patent application Ser. No. 15/137,594 filed on Apr.25, 2016 which is a continuation of, and claims priority to and thebenefit of, U.S. patent application Ser. No. 14/148,585 filed on Jan. 6,2014 which is a continuation of, and claims priority to and the benefitof, U.S. patent application Ser. No. 13/849,034 filed on Mar. 22, 2013,now U.S. Pat. No. 8,624,381, which is a continuation of, and claimspriority to and the benefit of, U.S. patent application Ser. No.13/622,058 filed on September 2012, now U.S. Pat. No. 8,460,967, whichis a continuation of, and claims priority to and the benefit of, U.S.patent application Ser. No. 12/645,969 filed on Dec. 23, 2009, now U.S.Pat. No. 8,278,749, which claims priority to and the benefit of U.S.provisional application No. 61/148,584 filed on Jan. 30, 2009. Theentire content of the above identified prior filed applications ishereby entirely incorporated herein by reference.

FIELD

The present disclosure relates generally to methods and systems relatedto radio frequency (RF) communication devices.

BACKGROUND

In millimeter wave radar systems (e.g. as for automotive safety andcomfort applications) antenna structures are placed on high frequencysubstrates or high frequency printed circuit boards (HF PCBs),increasing the overall cost of design due to the extra high expense ofsuch high frequency substrates. Antennas such as microstrip antennas(e.g. patch antennas) are often built on these special high frequencysubstrates. HF PCBs are often constructively based on Rogers, Taconic orother PTFE materials.

Millimeter wave output power can be generated on a semiconductormonolithic microwave integrated circuit (MMIC), which may be locatedalso on the HF PCB. MMIC devices typically perform functions such asmicrowave mixing, power amplification, low noise amplification, and highfrequency switching. The inputs and outputs on MMIC devices arefrequently matched to a characteristic impedance (e.g. 50 ohms) andinterconnect to an antenna. These interconnections between MMIC devicesand antenna generally involve a lossy chip/board interface (e.g. bondwires).

Whenever a source of power, such as MMIC devices, delivers power to aload, the power is delivered most efficiently when the impedance of theload is equal to or matches the complex conjugate of the impedance ofthe source (impedance matching). For two impedances to be complexconjugates, their resistances are equal, and their reactance are equalin magnitude but of opposite signs. Such impedance matching betweenantennas and chip output can suffer from large manufacturing tolerancesof the bonding process and on printed circuit board (PCB) wiring.

Because of a large demand for efficient, less expensive, andcost-effective radar sensing, suppliers face the challenge of deliveringantenna packages with maximum potential range, data rate and powerintegrated in the same radar system.

SUMMARY

The following presents a simplified summary in order to provide a basicunderstanding of one or more aspects of the invention. This summary isnot an extensive overview of the invention, and is neither intended toidentify key or critical elements of the invention, nor to delineate thescope thereof. Rather, the primary purpose of the summary is to presentsome concepts of the invention in a simplified form as a prelude to themore detailed description that is presented later.

According to an aspect, a semiconductor radar module includes anintegrated circuit (IC) radar device embedded within a wafer levelpackage compound layer, the wafer level package compound layer extendingat least partially lateral to the IC radar device. An interface layerabutting the wafer level package compound layer comprises aredistribution layer coupled to the IC radar device for connecting theIC radar device externally. An underfill material extends between theinterface layer and an external substrate and abuts the interface layerand the external substrate. The interface layer is disposed between thewafer level package compound layer and the underfill material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1a illustrates a top view of a semiconductor module of oneembodiment of the present disclosure;

FIGS. 1b-1d illustrate various embodiments of a cross section of asemiconductor module in accordance with some aspects of the presentdisclosure;

FIGS. 2a-2c illustrate various embodiments of a cross section of asemiconductor module in accordance with some aspects of the presentdisclosure;

FIGS. 3a-3f illustrate various embodiments of antenna structures for thepresent disclosure;

FIG. 4a illustrates an exemplary dipole antenna structure according toone aspect of the present disclosure;

FIG. 4b illustrates an exemplary semiconductor module in accordance withone aspect of the present disclosure; and

FIG. 5 is a flowchart illustrating a method of fabricating asemiconductor module in accordance with one aspect of the disclosure.

DETAILED DESCRIPTION

One or more implementations of the present invention will now bedescribed with reference to the attached drawings, wherein likereference numerals are used to refer to like elements throughout.

Integrated wafer packages can be integrated with antenna structures thatare coupled to an integrated circuit (IC) chip through a feed structurethat is directly connected to the chip and without a bonding interfacestructure that is external to bond pad connections of the IC device. Forexample, at least one antenna can be integrated with the chip through aninterface layer comprising a metallization layer (e.g. redistributionlayer) coupled to a package molding compound with the chip embeddedtherein. The interface layer integrates the antenna components directlywithin the same package and can further comprise three dimensionalinterconnect structures (e.g. solder balls) configured to connect thechip externally. Expensive high frequency substrates and lossyinterfaces can thereby be eliminated for integrating antennas into apackage in high frequency applications (e.g. millimeter waver radarsensing).

FIG. 1a illustrates a top view of a semiconductor module 100 withintegrated antenna structures, according to an exemplary embodiment ofthe disclosure, and integrally packaged with an integrated circuit (IC)chip 102 for wireless communication. For example, the module 100 cancomprise integrated antenna structures 106 and 108 embedded therein andintegrated to the IC chip 102. Although two antenna structures 106 and108 are illustrated herein, the disclosure is not limited to anyspecific number of antenna structures. The module 100 thereforecomprises at least one integrated antenna structure fortransmitting/receiving communication signals (e.g., millimeter waveoutput signals).

The semiconductor module 100 can comprise a wafer package 104, forexample, an embedded wafer level ball grid array (eWLB) package 104comprising the IC chip 102. The IC chip 102 can be any kind ofintegrated circuit chip such as any silicon chip that is embedded withinthe package 104. For example, the IC chip 102 may be a monolithicmicrowave integrated circuit (MMIC) chip for microwave engineeringprocesses. MMIC devices typically perform functions such as microwavemixing, power amplification, low noise amplification, and high frequencyswitching. MMICs are dimensionally small (from around 1 mm² to 10 mm²)and can be mass produced, which has allowed the proliferation of highfrequency devices such as cellular phones. MMICs have fundamentaladvantages, namely transistor device speed and a semi-insulatingsubstrate. Both factors can help with the design of high frequencycircuit functions.

The wafer package 104 can comprise three dimensional (3D) bondinginterconnect/interface structures 110, such as solder balls that may besurface-mountable in nature. The 3D bonding interconnect structures 110can provide external contacts, mechanical support and/or spacing betweenthe wafer package 104 and external contacts (e.g., package leads on aprinted circuit board). For example, the 3D interconnect structures 110can provide electrical connections between active components of the ICchip 102 or external components. The interconnect structures cancomprise various bonding materials, such as bonding metals (e.g. Sn, Ag,and/or Cu).

The wafer package 104 can comprise a package mold compound 112 in whichthe IC chip 102 and solder balls 110 can be integrated within and/orencapsulated on at least one side by the mold compound. The IC chip 102comprises bond pads or contact pads 116 on a surface of the chip formaking electrical connections from the chip 102 to contacts (e.g., viabond wires 114). The distance of contact pads 116 and the silicon therebetween can be about 0.1 mm, and thus, connecting to a printed circuitboard is effectively done with bond wires 114 rather than through directcontact. The bond wires 114 may interconnect the contact pads 116 of theIC chip 102 to the 3D bonding interface structures 110.

The integrated antenna structure 106 and integrated antenna structure108 may be used to transmit and/or receive wireless communicationsignals thereat to form a transceiver device. While the integratedantenna structure 106 and 108 are illustrated as two separate antennastructures, they may also be one antenna structure acting as atransceiver for transmission and/or reception thereat. Additionally,more than two antenna structures may be integrated into the package 104and positioned in various angels for an optimized performance andminimizing mutual coupling.

The integrated antenna structure(s) can also comprise any one of avarious types of planar antennas. For example, the antenna structures106 and/or 108 may comprise a dipole antenna (FIG. 3a ), a folded dipoleantenna (FIG. 3b ), a ring antenna (FIG. 3c ) a rectangular loop antenna(FIG. 3d ), a patch antenna (FIG. 3e ), a coplanar patch antenna (FIG.3f ), monopole antennas, etc., in addition to one or more of varioustypes of antenna feed and/or impedance matching networks, such asbalanced differential lines, coplanar lines, etc. in which one ofordinary skill in the art would appreciate.

In one embodiment, the integrated antenna structure 106 and/or 108 canbe integrated into the package 104 with the chip 102 and package moldcompound 112. For example, the integrated antenna 106 and/or 108 can beintegrated into the same layer as the 3D interconnect structures 110(e.g. solder balls) through an interface layer comprising redistributionor metallization layer (discussed infra). This can enable the antennasto be contacted to the silicon chip 102 within package 104 without abonding interface structure that is external to bond pad connections 116of the IC device. Because the package 104 comprises one common surfacewhere the packaged mold compound 112 and chip 102 are combined in onewafer package 104, the interconnection between the antenna structures106, 108 and silicon chip 102 can be done in one wafer fabricationprocess flow. Thus, the cost of expensive high frequency substrates,often utilized for wave radar systems (e.g. millimeter waver radarsystems, as for automotive safety and comfort applications) can beavoided. Additionally, impedance matching between antennas and chipoutput does not have to suffer from large tolerances of the bondingprocess and on printed circuit board wiring.

Referring now to FIG. 1b , illustrates one embodiment of a cross-sectionof the semiconductor module 100 along the line 1 b-1 b. In theillustrative example of FIG. 1b , a printed circuit board substrate 116is coupled to the package 104 via solder balls 110 and interconnects120. The package 104 (as discussed above) can comprise a package moldingcompound layer 126 that comprises the package molding compound 112 andthe IC chip 102, and an interface layer 117 comprising a redistributionlayer 121 with integrated structures coupled thereto and a dielectriccoat 119.

The package molding compound 112 can have very low losses and is a verygood substrate for applications requiring small packages, such as in RFor wireless communication chips (e.g. for microwave radar sensing). Thepackage molding compound 112 can comprise an organic polymer, such as anepoxy material that has an inorganic filling material (e.g. silicondioxide). The package molding compound layer 126 can have the IC chip102 embedded within the package molding compound 112, wherein asubstantially planar surface 124 can be formed thereat and during waferpackage processing.

The package 104 further comprises the interface layer 114 on a surfaceof the package molding compound layer 126 that comprises a metallayer/plane or the redistribution layer 121 in the dielectric coating121 where the contents from the chip 102 to the package 104 areconnected and integrated. The package 104 comprising the redistributionlayer 114 and the package molding compound layer 126 can have a width wof about 450 microns.

The package 104 also comprises the 3D interconnect structures 110 (e.g.solder balls) that add further dimension to the package 104. The balls110 are the interface from the IC chip 102 to the external world (e.g.outside the package molding compound layer 104), and can have a diameterof about 300 microns. The distance between the balls can be about 0.5mm, which is represented by a pitch p. This is a distance p in which theballs 110 are capable of connecting to a circuit board 116 and becompactly integrated into the package 104. The 3D bonding interconnectstructures 110 can provide external contacts, mechanical support and/orspacing between the package 104 and external contacts 120 (e.g., packageleads on a printed circuit board).

Between the package 104 and the printed circuit board 116 can be an aircavity 128. In one embodiment, the air cavity 128 can be filled withonly air and/or a filler 132 (as illustrated in FIG. 1c ), such as anunder-fill comprising an epoxy compound (not shown). The printed circuitboard (PCB) 116 can comprise a ground plane and/or reflector 112positioned on the PCB 116 and within the air cavity 128. The reflector122 can be opposite to and spaced from the integrated antenna structure106 and/or 108 for providing a directive radiation 118 in a direction118 from the package 104 and/or from the PCB 116. Without the groundplace/reflector 122, the radiation of energy from antenna structurescould be in both directions, to the top and through the package moldcompound as well as through the back of the package. With the reflector122, a directive radiation 118 is directed substantially perpendicularto the PCB or the package to the outside world. In one embodiment,further reflector structures (not shown) or additional metal layerswithin the interface layer 117, such as metal bars (not shown) may beplaced on one side of the antenna structure 108 for further directing adirective radiation 118 to a specific direction.

In one embodiment, the antenna structure 108 is integrated with thepackage molding compound layer 126 and to the IC chip 102 within theinterface layer 117 through the redistribution layer 114 therein. Forexample, the antenna structure 108 can be formed to the sameredistribution layer 114 as the bonding interface structure comprisingthe solder balls or 3D interconnect structures 110. The integratedantenna structure 108 can thus be coupled to the IC chip 102 from theredistribution layer 121 via a metallization layer 130 within. Becausethe antenna structure 108 is integrated directly into the package 104,no additional substrate specific to the antenna structure 108 is needed.The metallization layer 130 can also comprise metal interconnects (e.g.copper) for connecting the 3D bonding interconnect structures 110 and/orthe integrated antenna structure 108 to bond pad connections 116 of theIC chip 102.

By integrating the antenna structures directly to IC chip 102 in thepackage molding compound layer 104, no additional high frequencysubstrates or lossy interfaces are incorporated for integratingantennas. Thus, cost structures for design can be reduced. Additionally,low loss interconnects between antennas and a semiconductor device canbe achieved by means of such high precision wafer level processedmodules as discussed above. Consequently, applications (e.g. automotivesafety, blind spot detection and/or park aiding) can be finallyimplemented without high frequency connections on the circuit board.

Referring to FIG. 1c , illustrates one embodiment of a cross-section ofthe semiconductor module 100 along lines 1 b-1 b that is similar to FIG.1b . The air cavity/gap 128 is located between interface layer 117 andthe ground plane/reflector 122. In one embodiment, an additionalmaterial is introduced that is a fill or an underfill 132, such thatthere is substantially less air or no air in the air cavity 128. Bydoing this, the radiation properties of the antenna can be changed. Forexample, the fill can be used to reduce the thermal stress between thePCB board 116 and the IC chip 102 (e.g. a flip chip device). With thefill 132, reliability can be improved with respect to temperaturecycling. The fill 132 can be a type of epoxy or organic material. Thefill 132 comprises a different dielectric constant than air (about 1).As a consequence, the effective electrical distance between theintegrated antenna structure 108 and reflector 122 can be improved. Forexample, the effective electrical distance can be about a quarter of awavelength of the antenna radiation.

Referring now to FIG. 1d , illustrates another embodiment of across-section of the semiconductor module 100 along lines 1 b-1 b thatis similar to FIG. 1b . FIG. 2d illustrates an embodiment of the module100 further comprising at least one parasitic element 136 (e.g. aparasitic antenna structure) located on the surface 124 of the packagemolding compound layer 126 for modulating the field directivity of thedirective radiation 118 of the integrated antenna structure 108. Thesurface 124 can be substantially planar and opposing another surface ofthe package molding compound layer 126 coupled to the interface layer.The parasitic element 138 can be further located opposite to theintegrated antenna structure 108 and in a parallel configurationthereto.

The parasitic element 136 can be a radio antenna element, which does nothave any wired input, but instead absorbs radio waves radiated fromanother active antenna element (e.g. integrated antenna 108) inproximity. Then, the element 136 can re-radiate radio waves in phasewith the active element so that it adds to the total transmitted signal.This can change the antenna pattern and beam width. The parasiticelement 136 can also be used to alter the radiation parameters of anearby active antenna. For example, the parasitic element 136 can be aparasitic microstrip patch antenna located above the integrated antennastructure 108, which may can also be a patch antenna in one embodiment.This antenna combination resonates at a slightly lower frequency thanthe original element, and thus, can increase the impedance bandwidth ofthe integrated antenna structures embedded within the interface layer117.

FIGS. 2a-2c illustrate different embodiments of a cross-sectional viewof a semiconductor module 200 comprising integrated antenna structures,according to exemplary embodiments of the disclosure, and integrallypackaged with an integrated circuit (IC) chip 202 for wirelesscommunication. For example, the module 200 can comprise an integratedantenna structure 210 embedded within a wafer package layer 204comprising an interface layer 206 coupled to the IC chip 202. Below theintegrated antenna structure 210 is a ground plane/lead frame orreflector plate 216 for directing a directive radiation of the antenna.

The module 200 can comprise a bonding interface structure 222. Thebonding interface structure 222 can further comprise an external contactfor contacting surfaces external to the module 200, at least one bondwire 220, and at least one three dimensional (3D) interconnect 212integrated within the interface layer 206. For example, the 3Dinterconnect 212 can comprise surface-mountable solder balls providingexternal contacts and a mechanical support structure.

In one embodiment, the 3D interconnect structure 212 can be integratedwith the integrated antenna structure 206 and the IC chip 202 fromwithin the interface layer 206. The interface layer 206 can comprise adielectric and a redistribution layer 208 that connects componentstherein, such as the integrated antenna structure 210 and 3Dinterconnects 212. The redistribution layer 208 can comprise a metalplane (e.g. copper) for providing a metallization interconnect 214integrating the components within the interface layer 206 to the IC chip202.

In one embodiment, there is a reflector plate or ground plane 216 on asurface of the mold package layer 204 with the chip 202 embeddedtherein. The ground plane 216 can be used as reflector for the antennaand comprise a metal (e.g. copper) that can be any metal suitable fordirecting fields from a direction 218 through the mold compound withinthe mold package layer 204. The reflector plate 216 can be locatedopposite one side of the package molding compound layer 204 from theinterface layer 206 coupled thereto and parallel to the integratedantenna structure 210 embedded within the interface layer 206.

In one embodiment, a second package molding compound layer 224 can bedeposited. The second package molding compound layer 224 can encapsulatesurfaces comprising the interface layer 206, the mold package compoundlayer 204, the reflector plate (e.g. ground plane) 216 and/or threedimensional interconnect structures 212. Alternatively, in oneembodiment, a window 224 can be formed within the second package moldingcompound layer, as illustrated in FIG. 2b . The window 224 can be anopening surrounding the interface layer 206 where the second packagemolding compound layer 224 is absent.

FIG. 2c illustrates one embodiment of the module 200 further comprisingat least one parasitic antenna structure 228 located on a surface 230 ofthe second package molding compound layer 204 for modulating the fielddirectivity 218 of the integrated antenna structure 210. The surface 230is substantially planar, and the parasitic antenna structure 228 can belocated opposite to the integrated antenna structure 210 and in aparallel configuration with it.

By integrating the antenna structures directly to the IC chip 202 fromwithin the interface layer 206, no additional high frequency substratesor lossy interfaces need to be incorporated for integrating antennas.Thus, cost structures for design can be reduced. Additionally, low lossinterconnects between antennas and a semiconductor device can beachieved by means of such high precision wafer level processed modulesas discussed above. Consequently, applications can be implementedwithout high frequency connections on the circuit board.

FIGS. 4a and 4b illustrate embodiments of an antenna structure with anantenna feed network formed within an interface layer of a waferpackage. Although folded dipole antenna devices and integration of suchdevices in integrated circuit package are described, the presentdisclosure is not limited to any particular antenna type or operatingfrequency. Rather, the disclosure is applicable to any antenna typesuitable for applications and various frequencies of operation.

FIG. 4a is a schematic diagram illustrating an exemplary antenna devicecomprising a folded dipole antenna 402 and feed network 404 comprising adifferential line or a single ended line. The feed network 404 canadditionally comprise a matching structure for various wavelengths. Forexample, the matching structure can be a quarter wavelength matchingstructure.

FIG. 4b illustrates a wafer package 400 with a silicon chip 406 embeddedwithin a molding compound 408. Integrated to the chip 406 is an antennastructure 410 that is a folded dipole antenna, as illustrated in FIG. 4a. Although four antennas structures 410 are illustrated, this is onlyone embodiment and any number of antenna structures can be integrated.For example, at least one antenna structures can be integrated in thepackage and connected to the chip 406.

In one embodiment, the antenna structure 410 comprises at least onemetal bar 412 integrated into the package 400. The metal bar 412 can beused for limiting the effect of waves propagating from the antennastructure 410 and providing a directive gain in the direction desired.

Now that some examples of systems in accordance with aspects of theinvention have been discussed, reference is made to FIG. 7, which showsa method in accordance with some aspects of the invention. While thismethod is illustrated and described below as a series of acts or events,the present invention is not limited by the illustrated ordering of suchacts or events. For example, some acts may occur in different ordersand/or concurrently with other acts or events apart from thoseillustrated and/or described herein. In addition, not all illustratedacts may be required to implement a methodology in accordance with oneor more aspects of the present invention. Further, one or more of theacts depicted herein may be carried out in one or more separate acts orphases.

The method 500 for fabricating a semiconductor module initializes at502. An integrated circuit (IC) chip is provided at 504 and embeddedwithin a package molding compound. Together the molding compound and ICchip can have a surface that is planar.

At 506 an interface layer is formed within the same package forintegrating components therein to the chip within the molding compound.The interface layer is formed on the surface and coupled to the IC chipand the package molding compound. The method of forming the interfacelayer begins at 508 and comprises forming a redistribution layer. Thislayer can be a metallization layer formed from a metal plane, forexample a copper plate therein. This layer provides the metallizationinterconnecting components of the interface layer to the IC chip. Forexample, at 510 at least one antenna structure is integrated to the ICchip within the package through the redistribution layer of the package.Additionally, a three dimensional (3D) interconnect structure (e.g.solder balls) are also formed and integrated with the IC chip throughthe redistribution layer. At 512 a dielectric or insulating coat can beformed. These processes steps, as mentioned above do not need to be inthe order represented and such flow is only meant to provide an exampleof the method process 500. For example, a dielectric coat can be formedin place of 508 instead of at 512, and an antenna structure can beformed before or at the same time as a 3D interconnect structure. Noparticular sequence is required and any combination can be appreciatedby one of ordinary skill in the art.

In addition, a second molding compound layer can be formed thatsurrounds the interface layer with the integrated antenna structureembedded therein, the mold package compound, the bonding interfacestructure and a ground plane formed. A parasitic antenna can be locatedon a surface over the integrated antenna structure and in a parallelconfiguration thereto.

In particular regard to the various functions performed by the abovedescribed components or structures (assemblies, devices, circuits,systems, etc.), the terms (including a reference to a “means”) used todescribe such components are intended to correspond, unless otherwiseindicated, to any component or structure which performs the specifiedfunction of the described component (e.g., that is functionallyequivalent), even though not structurally equivalent to the disclosedstructure which performs the function in the herein illustratedexemplary implementations of the invention. In addition, while aparticular feature of the invention may have been disclosed with respectto only one of several implementations, such feature may be combinedwith one or more other features of the other implementations as may bedesired and advantageous for any given or particular application.Furthermore, to the extent that the terms “including”, “includes”,“having”, “has”, “with”, or variants thereof are used in either thedetailed description and the claims, such terms are intended to beinclusive in a manner similar to the term “comprising”.

What is claimed is:
 1. A semiconductor radar module comprising: anintegrated circuit (IC) radar device embedded within a wafer levelpackage compound layer, the wafer level package compound layer extendingat least partially lateral to the IC radar device; an interface layerabutting the IC radar device at a first portion, and abutting the waferlevel package compound layer at a second portion, wherein the interfacelayer comprises a redistribution layer coupled to the IC radar devicefor connecting the IC radar device externally, wherein theredistribution layer comprises at least one of an antenna or an antennafeed extending in the first and second portion, and an underfillmaterial extending at least in the second portion between the interfacelayer and an external substrate, the underfill material abutting theinterface layer and the external substrate, wherein the interface layeris disposed between the wafer level package compound layer and theunderfill material, and wherein the underfill material only partiallyfills an air cavity formed between the interface layer and the externalsubstrate.
 2. The semiconductor radar module of claim 1, furthercomprising: a 3D interconnect structure configured to contact theexternal substrate.
 3. The semiconductor radar module of claim 2,wherein the 3D interconnect structure extends within the underfillmaterial.
 4. The semiconductor radar module of claim 2, wherein the 3Dinterconnect structure is a solder ball.
 5. The semiconductor radarmodule of claim 2, wherein the underfill material comprises an organicmaterial.
 6. The semiconductor radar module of claim 2, wherein theunderfill material comprises epoxy material.
 7. The semiconductor radarmodule of claim 1, wherein the IC radar device is a mm-wave radar MMICdevice configured for mixing, power amplification, and low noiseamplification.
 8. The semiconductor radar module of claim 1, wherein theunderfill material has a dielectric constant that is greater than airsuch that a distance between (i) a surface of the external substrateabutting the underfill material, and (ii) at least one of the antenna orthe antenna feed embedded within the interface layer, is increased to apredetermined electrical length.
 9. The semiconductor of claim 8,wherein the predetermined electrical length is a quarter wavelength ofantenna radiation associated with the antenna.
 10. The semiconductor ofclaim 8, wherein the predetermined electrical length represents adistance between the antenna and a radiation reflector disposed on theexternal substrate abutting the underfill material.
 11. Thesemiconductor of claim 10, wherein the radiation reflector is configuredto direct a radiation of energy associated with the antenna in adirection that is opposite to that of the external substrate.